Flash memory devices and methods of operating the

专利名称：Flash memory devices and methods of

operating the same

发明人：Jin-Yub Lee申请号：US11606283申请日：20061130公开号：US07460403B2公开日：20081202

专利附图：

摘要：A memory cell array includes a NAND string formed of a plurality of memorycells coupled in series between a string selection transistor and a ground selectiontransistor. The string selection transistor controls an electrical connection between the

NAND string and a bit line based on a string selection voltage in a read operation. A rowselection circuit is coupled to the memory cell array through a string selection line,ground selection line and a plurality of word lines. The row selection circuit selects aword line which is coupled to the read memory cell among the plurality of word linesbased on a row address signal and a read voltage in a read operation. A voltagegeneration circuit generates the string selection voltage and the read voltage.

申请人：Jin-Yub Lee

地址：Seoul KR

国籍：KR

代理机构：Harness, Dickey & Pierce, P.L.C.

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