FLASH-BASED EEPROM EMULATION USING ERROR CORRECTIO

专利名称：FLASH-BASED EEPROM EMULATION USING

ERROR CORRECTION CONTROL

发明人：John Robert HALL,Robert M. Crosby,Ulrike

Behringer

申请号：US13022624申请日：20110207

公开号：US20120204078A1公开日：20120809

专利附图：

摘要：A circuit for emulating bit-level erasable non-volatile memory includes anemulator that activates a first virtual sector of a bit-level programmable, block-level

erasable non-volatile memory. The first virtual sector receives and stores write requestshaving an address and a record to be written to the received address. A linked list ofrecords is used to store each subsequent record received in subsequent write requestshaving the received address. A separate thread in the linked list is maintained for eachdifferent received address. The last record subsequently received for each of thereceived addresses is copied to a linked list of a second virtual sector when a firstoperating parameter has been exceeded. The active virtual sector is deactivated anderased when the last record subsequently received for each of the received addresses inthe linked list of the active virtual sector have been copied to the second virtual sector.

申请人：John Robert HALL,Robert M. Crosby,Ulrike Behringer

地址：Houston TX US,Sugar Land TX US,Muenchen DE

国籍：US,US,DE

更多信息请下载全文后查看