Method of forming an electrode on a substrate of a

专利名称：Method of forming an electrode on a

substrate of a semiconductor device

发明人：Hye-Young Kim,Kyo-Hoo Moon申请号：US09/282976申请日：19990331公开号：US06048783A公开日：20000411

摘要：A double-layered electrode layer is formed on a substrate according to aprocess in which lower and upper electrode layer forming materials are deposited on asubstrate in this order, then a lower photoresist pattern is formed on the upperelectrode layer forming material. Next, the lower and upper electrode layer formingmaterials are isotropically etched to obtain lower and upper electrode layers, after whichthe upper electrode layer is anisotropically etched such that a width of the upperelectrode layer becomes less than that of the lower electrode layer.

申请人：LG. LCD INC.

代理机构：Graham & James LLP

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