Magnetoresistance effect device exchange coupling

专利名称：Magnetoresistance effect device exchange

coupling film including a disorderedantiferromagnetic layer, an FCC exchangecoupling giving layer, and a BCC exchangecoupling enhancement layer

发明人：Atsushi Kamijo申请号：US10255847申请日：20020926公开号：US06819532B2公开日：20041116

专利附图：

摘要：A foundation layer increasing adhesive properties to a substrate, anotherfoundation layer controlling orientation of an antiferromagnetic layer, the

antiferromagnetic layer including a disordered alloy of IrMn, a pinning layer, and a capprotection layer are formed in the order on the substrate. The pinning layer includes twolayers having an exchange coupling giving layer which exchange-couples to the

antiferromagnetic layer and an exchange coupling enhancement layer which enhances theexchange coupling, the exchange coupling giving layer is made of a ferromagneticmaterial including Co or a CoFealloy (0≦X<25) having face-centered cubic structure. Theexchange coupling enhancement layer is made of Fe or a CoFealloy (25≦Y≦100) havingbody-centered cubic structure.

申请人：NEC CORPORATION

代理机构：Ostrolenk, Faber, Gerb & Soffen, LLP

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