MEMORY SYSTEM WITH REVERSIBLE RESISTIVITY-SWITCHIN

专利名称：MEMORY SYSTEM WITH REVERSIBLE

RESISTIVITY-SWITCHING USING PULSES OFALTERNATRIE POLARITY

发明人：Peter Rabkin,George Samachisa,Roy E.

Scheuerlein

申请号：US12948388申请日：20101117

公开号：US20120120711A1公开日：20120517

专利附图：

摘要：A memory system includes a plurality of non-volatile storage elements that

each comprise a diode (or other steering device) in series with reversible resistance-switching material. One or more circuits in the memory system program the non-volatilestorage elements by changing the reversible resistance-switching material of one ormore non-volatile storage elements to a first resistance state. The memory system canalso change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state byapplying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to therespective diodes (or other steering devices) such that current flows in the diodes (orother steering devices) without operating the diodes (or other steering devices) inbreakdown condition.

申请人：Peter Rabkin,George Samachisa,Roy E. Scheuerlein

地址：Cupertino CA US,San Jose CA US,Cupertino CA US

国籍：US,US,US

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