Encapsulation of conductive lines of semiconductor

专利名称：Encapsulation of conductive lines of

semiconductor devices

发明人：Ihar Kasko,Kia-Seng Low,John P. Hummel申请号：US108858申请日：20040726

公开号：US20060019431A1公开日：20060126

专利附图：

摘要：A method of encapsulating conductive lines of semiconductor devices and astructure thereof. An encapsulating protective material comprising TaN, Ta, Ti, TiN, orcombinations thereof is disposed over conductive lines of a semiconductor device. The

encapsulating protective material protects the conductive lines from harsh etchchemistries when a subsequently deposited material layer is patterned and etched. Theencapsulating protective material is conductive and may be left remaining in thecompleted semiconductor device. The encapsulating material is patterned using amasking material, and processing of the semiconductor device is then continued. Themasking material may be left remaining in the structure as part of a subsequentlydeposited insulating material layer.

申请人：Ihar Kasko,Kia-Seng Low,John P. Hummel

地址：Mennecy FR,Hopewell Junction NY US,Verbank NY US

国籍：FR,US,US

更多信息请下载全文后查看